KM736V749 Datasheet 128Kx36 & 256Kx18 Pipelined NtRAM

Manufacturer: Samsung Semiconductor

Datasheet Details

The KM736V749 and KM718V849 are 4,718,592 bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.

Address, data inputs, and all control signals except output enable

KM736V749 KM718V849 Document Title 128Kx36 & 256Kx18 Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev.

No.

0.0 0.1 History 1.

3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
Α interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.

Part Number	Description
KM736V747	128Kx36 & 256Kx18 Flow-Through NtRAM
KM736V787	128Kx36 Synchronous SRAM
KM736V789	128Kx36 Synchronous SRAM
KM736V790	128Kx36 Synchronous SRAM
KM736V795	128Kx36 Synchronous SRAM
KM736V799	128Kx36 Synchronous SRAM
KM736V687	64Kx36-Bit Synchronous Burst SRAM
KM736V687A	64Kx36-Bit Synchronous Burst SRAM
KM736V689	64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V689A	64Kx36-Bit Synchronous Pipelined Burst SRAM